Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors

Fabrication and Characterization of Resonant Cavity Light-emitting Transistors By

Fabrication and Characterization of Organic Light Emitting Devices

By using Indium tin oxide (ITO) as anode material and NPB and Alq3 as hole transport layer(HTL) and electron transport layer(ETL) respectively, a Organic Light Emitting Device (OLED) with emitted wavelength of (525 ± 20) nm is produced. Aluminium (Al) is used as a cathode. The calculated emission energy is 2.37 ± 0.12 eV compared to theoretically 2.8 eV from the band gap in Alq3. This shifting ...

Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes.

The potential of organic semiconductor-based devices for light generation is demonstrated by the commercialization of display technologies based on organic light-emitting diodes (OLEDs). Nonetheless, exciton quenching and photon loss processes still limit OLED efficiency and brightness. Organic light-emitting transistors (OLETs) are alternative light sources combining, in the same architecture,...

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward v...

Organic thin film transistors and polymer light-emitting diodes

To fully realize the advantages of organic flexible electronics, patterning is very important. In this paper we show that a purely additive patterning technique, termed polymer inking and stamping, can be used to pattern conductive polymer PEDOT and fabricate sub-micron channel length organic thin film transistors. In addition, we applied the technique to transfer a stack of metal/conjugated po...